Part Details for IXTP150N15X4 by IXYS Corporation
Overview of IXTP150N15X4 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTP150N15X4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXTP150N15X4
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Mouser Electronics | MOSFET MSFT N-CH HIPERFET-Q 3&44 RoHS: Compliant | 172 |
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$4.6700 / $8.8700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
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$5.3700 | Buy Now |
|
DISTI #
IXTP150N15X4
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TTI | MOSFET MSFT N-CH HIPERFET-Q 3&44 Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$4.6200 / $5.8500 | Buy Now |
|
DISTI #
IXTP150N15X4
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TME | Transistor: N-MOSFET, unipolar, 150V, 150A, 480W, TO220AB, 100ns Min Qty: 1 | 206 |
|
$5.3600 / $7.2400 | Buy Now |
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New Advantage Corporation | MOSFET DIS.150A 150V N-CH TO220AB ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 201 |
|
$9.8700 / $10.5700 | Buy Now |
Part Details for IXTP150N15X4
IXTP150N15X4 CAD Models
IXTP150N15X4 Part Data Attributes:
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IXTP150N15X4
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP150N15X4
IXYS Corporation
Power Field-Effect Transistor,
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 480 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |