Part Details for IXTP1N80P by IXYS Corporation
Overview of IXTP1N80P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP1N80P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTP1N80P
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Mouser Electronics | MOSFETs Polar Power Mosfet 800V 1A RoHS: Compliant | 0 |
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$1.7900 / $2.7900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Lead time: 24 Weeks Container: Tube | 0Tube |
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$1.5300 | Buy Now |
DISTI #
IXTP1N80P
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TTI | MOSFETs Polar Power Mosfet 800V 1A Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.7800 | Buy Now |
DISTI #
IXTP1N80P
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TME | Transistor: N-MOSFET, unipolar, 800V, 1A, 42W, TO220AB, 700ns Min Qty: 1 | 0 |
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$1.5700 / $2.3800 | RFQ |
Part Details for IXTP1N80P
IXTP1N80P CAD Models
IXTP1N80P Part Data Attributes
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IXTP1N80P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP1N80P
IXYS Corporation
Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.3 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTP1N80P
This table gives cross-reference parts and alternative options found for IXTP1N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTP1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTP1N80P vs IXTP1N80P |
IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP1N80P vs IXTA1N80P |
IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTP1N80P vs IXTU1N80P |
IXTY1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTP1N80P vs IXTY1N80P |
IXTA1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1N80P vs IXTA1N80P |
IXTY1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP1N80P vs IXTY1N80P |
IXTU1N80P | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP1N80P vs IXTU1N80P |