Part Details for IXTP20N65X by IXYS Corporation
Overview of IXTP20N65X by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTP20N65X
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
747-IXTP20N65X
|
Mouser Electronics | MOSFET 650V/9A Power MOSFET RoHS: Compliant | 0 |
|
$5.3100 | Order Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
|
$5.2800 | Buy Now |
DISTI #
IXTP20N65X
|
TME | Transistor: N-MOSFET, unipolar, 650V, 20A, 320W, TO220AB, 350ns Min Qty: 1 | 0 |
|
$5.7100 / $7.9900 | RFQ |
Part Details for IXTP20N65X
IXTP20N65X CAD Models
IXTP20N65X Part Data Attributes:
|
IXTP20N65X
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTP20N65X
IXYS Corporation
Power Field-Effect Transistor,
|
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.21 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 22 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 320 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |