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Transistors Power Field-Effect Transistors IXTP2R4N120P

Transistors
IXTP2R4N120P
Description: Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Overview of IXTP2R4N120P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Motor control systems

Price & Stock for IXTP2R4N120P by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTP2R4N120P
Mouser Electronics MOSFETs 2.4 Amps 1200V 7.5 Rds RoHS: Compliant 294
  • 1 $6.4400
  • 10 $5.5300
  • 50 $5.0000
  • 100 $4.6000
  • 250 $4.2400
  • 500 $4.0600
  • 1,000 $3.4200
$3.4200 / $6.4400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks Container: Tube 0
Tube
  • 50 $3.9300
$3.9300 Buy Now
DISTI # IXTP2R4N120P
TTI MOSFETs 2.4 Amps 1200V 7.5 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $4.2200
  • 500 $4.0200
  • 1,000 $3.3900
$3.3900 / $4.2200 Buy Now
DISTI # IXTP2R4N120P
TME Transistor: N-MOSFET, Polar™, unipolar, 1.2kV, 2.4A, Idm: 6A, 125W Min Qty: 1 25
  • 1 $5.4800
  • 3 $4.8400
  • 10 $4.3500
  • 50 $4.0600
$4.0600 / $5.4800 Buy Now
New Advantage Corporation MOSFET DIS.2.4A 1200V N-CH TO220AB POLAR THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 207
  • 100 $8.0100
  • 207 $7.4700
$7.4700 / $8.0100 Buy Now

CAD Models for IXTP2R4N120P by IXYS Corporation
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Part Data Attributes for IXTP2R4N120P by IXYS Corporation
Parametric Data

IXTP2R4N120P
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-220AB
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
200 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1200 V
Drain Current-Max (ID)
2.4 A
Drain-source On Resistance-Max
7.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
6 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTP2R4N120P
    IXYS Corporation
    Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
    VS

Alternate Parts for IXTP2R4N120P

This table gives cross-reference parts and alternative options found for IXTP2R4N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP2R4N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTH2R4N120P Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc IXTP2R4N120P vs IXTH2R4N120P
IXTH2R4N120P Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN IXYS Corporation IXTP2R4N120P vs IXTH2R4N120P

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