Datasheets
IXTP36N30P by:

Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IXTP36N30P by Littelfuse Inc

Overview of IXTP36N30P by Littelfuse Inc

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Price & Stock for IXTP36N30P

Part # Distributor Description Stock Price Buy
DISTI # IXTP36N30P-ND
DigiKey MOSFET N-CH 300V 36A TO220AB Min Qty: 1 Lead time: 40 Weeks Container: Tube 1161
In Stock
  • 1 $4.7800
  • 50 $3.7896
  • 100 $3.2482
  • 500 $2.8873
  • 1,000 $2.4723
  • 2,000 $2.3279
$2.3279 / $4.7800 Buy Now

Part Details for IXTP36N30P

IXTP36N30P CAD Models

IXTP36N30P Part Data Attributes:

IXTP36N30P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXTP36N30P Littelfuse Inc Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Description PolarHTTM Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, 300V, 36A, 110 mΩ
Samacsys Manufacturer LITTELFUSE
Samacsys Modified On 2023-03-07 16:10:32
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTP36N30P

This table gives cross-reference parts and alternative options found for IXTP36N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP36N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTA36N30P Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IXYS Corporation IXTP36N30P vs IXTA36N30P
IXTQ36N30P Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation IXTP36N30P vs IXTQ36N30P
IXFM35N30L Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN IXYS Corporation IXTP36N30P vs IXFM35N30L
IXTP36N30P Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXYS Corporation IXTP36N30P vs IXTP36N30P
IXTQ36N30P Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc IXTP36N30P vs IXTQ36N30P

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