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Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTP36N30P-ND
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DigiKey | MOSFET N-CH 300V 36A TO220AB Min Qty: 1 Lead time: 40 Weeks Container: Tube |
1161 In Stock |
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$2.3279 / $4.7800 | Buy Now |
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IXTP36N30P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP36N30P
Littelfuse Inc
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Description | PolarHTTM Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, 300V, 36A, 110 mΩ | |
Samacsys Manufacturer | LITTELFUSE | |
Samacsys Modified On | 2023-03-07 16:10:32 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTP36N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP36N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTA36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP36N30P vs IXTA36N30P |
IXTQ36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXTP36N30P vs IXTQ36N30P |
IXFM35N30L | Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | IXYS Corporation | IXTP36N30P vs IXFM35N30L |
IXTP36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXTP36N30P vs IXTP36N30P |
IXTQ36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXTP36N30P vs IXTQ36N30P |