Part Details for IXTP4N80P by IXYS Corporation
Overview of IXTP4N80P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP4N80P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTP4N80P
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Mouser Electronics | MOSFET 3.5 Amps 800V 3 Rds RoHS: Compliant | 310 |
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$1.1900 / $2.8100 | Buy Now |
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Future Electronics | N-Channel 800 V 3.6 A 3.4 Ω Flange Mount PolarHV Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$1.1700 / $1.2900 | Buy Now |
DISTI #
IXTP4N80P
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TTI | MOSFET 3.5 Amps 800V 3 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.1700 / $1.3400 | Buy Now |
DISTI #
IXTP4N80P
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TME | Transistor: N-MOSFET, PolarHV™, unipolar, 800V, 3.6A, Idm: 8A, 100W Min Qty: 1 | 258 |
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$1.3500 / $2.0300 | Buy Now |
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New Advantage Corporation | MOSFET DIS.3.6A 800V N-CH TO220 POLARHV THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 24063 |
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$1.6400 / $1.7500 | Buy Now |
Part Details for IXTP4N80P
IXTP4N80P CAD Models
IXTP4N80P Part Data Attributes:
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IXTP4N80P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP4N80P
IXYS Corporation
Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 3.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTP4N80P
This table gives cross-reference parts and alternative options found for IXTP4N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP4N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFA3N80 | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN | IXYS Corporation | IXTP4N80P vs IXFA3N80 |
IXTA4N80P | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP4N80P vs IXTA4N80P |
BUK436W-800A127 | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | IXTP4N80P vs BUK436W-800A127 |
IXTP4N80P | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTP4N80P vs IXTP4N80P |
STB4NB80T4 | 4A, 800V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IXTP4N80P vs STB4NB80T4 |
IXFA3N80 | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN | Littelfuse Inc | IXTP4N80P vs IXFA3N80 |
BUK436W-800A,127 | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | IXTP4N80P vs BUK436W-800A,127 |
BUK456-800A127 | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IXTP4N80P vs BUK456-800A127 |