Part Details for IXTQ110N055P by IXYS Corporation
Overview of IXTQ110N055P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTQ110N055P
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 30 |
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RFQ | ||
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Quest Components | 24 |
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$2.3800 / $3.8080 | Buy Now | |
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Chip1Cloud | MOSFET N-CH 55V 110A TO-3P | 13900 |
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RFQ | |
DISTI #
1427380
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Farnell | MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 10 Weeks, 0 Days Container: Each | 0 |
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$1.4941 / $3.4778 | Buy Now |
Part Details for IXTQ110N055P
IXTQ110N055P CAD Models
IXTQ110N055P Part Data Attributes:
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IXTQ110N055P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTQ110N055P
IXYS Corporation
Power Field-Effect Transistor, 110A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-3P | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTQ110N055P
This table gives cross-reference parts and alternative options found for IXTQ110N055P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ110N055P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTA110N055P | Power Field-Effect Transistor, 110A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTQ110N055P vs IXTA110N055P |