Part Details for IXTQ18N60P by IXYS Corporation
Overview of IXTQ18N60P by IXYS Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IXTQ18N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTQ18N60P-ND
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DigiKey | MOSFET N-CH 600V 18A TO3P Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$3.8859 | Buy Now |
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DISTI #
747-IXTQ18N60P
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Mouser Electronics | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds RoHS: Compliant | 0 |
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$3.1600 / $3.8400 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3200 | Buy Now |
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DISTI #
IXTQ18N60P
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TTI | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$3.2300 / $3.8000 | Buy Now |
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DISTI #
IXTQ18N60P
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TME | Transistor: N-MOSFET, unipolar, 600V, 18A, 360W, TO3P, 500ns Min Qty: 1 | 0 |
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$3.5400 / $4.9600 | RFQ |
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New Advantage Corporation | MOSFET DIS.18A 600V N-CH TO3P POLARHV THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 520 |
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$6.6500 / $7.1200 | Buy Now |
Part Details for IXTQ18N60P
IXTQ18N60P CAD Models
IXTQ18N60P Part Data Attributes
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IXTQ18N60P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTQ18N60P
IXYS Corporation
Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 54 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ18N60P
This table gives cross-reference parts and alternative options found for IXTQ18N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ18N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXTQ18N60P vs IXTQ18N60P |
| IXTT18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTQ18N60P vs IXTT18N60P |
| IXTT18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTQ18N60P vs IXTT18N60P |
| IXFV18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN | IXYS Corporation | IXTQ18N60P vs IXFV18N60P |
| IXFH18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXTQ18N60P vs IXFH18N60P |
| IXTV18N60PS | Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXTQ18N60P vs IXTV18N60PS |
| IXFV18N60PS | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXTQ18N60P vs IXFV18N60PS |