Part Details for IXTQ34N65X2M by Littelfuse Inc
Overview of IXTQ34N65X2M by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXTQ34N65X2M
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25AJ5491
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Newark | Discrete Mosfet 34A 650V X2 To3P Fp/ Tube |Littelfuse IXTQ34N65X2M Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.4700 / $5.8800 | Buy Now |
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DISTI #
5656-IXTQ34N65X2M-ND
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DigiKey | DISCRETE MOSFET 34A 650V X2 TO3P Min Qty: 300 Lead time: 32 Weeks Container: Tube | Temporarily Out of Stock |
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$6.7369 | Buy Now |
Part Details for IXTQ34N65X2M
IXTQ34N65X2M CAD Models
IXTQ34N65X2M Part Data Attributes
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IXTQ34N65X2M
Littelfuse Inc
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Datasheet
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IXTQ34N65X2M
Littelfuse Inc
Power Field-Effect Transistor, 34A I(D), 650V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFP, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-3PFP, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.096 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.7 pF | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |