Part Details for IXTQ60N20L2 by IXYS Corporation
Overview of IXTQ60N20L2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTQ60N20L2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTQ60N20L2-ND
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DigiKey | MOSFET N-CH 200V 60A TO3P Min Qty: 1 Lead time: 44 Weeks Container: Tube |
149 In Stock |
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$12.8650 / $18.6300 | Buy Now |
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DISTI #
747-IXTQ60N20L2
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Mouser Electronics | MOSFETs LINEAR L2 SERIES MOSFET 200V 60A RoHS: Compliant | 34 |
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$11.9400 / $18.6300 | Buy Now |
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Future Electronics | 200V 60A 0.045 Ohm N-ch TO-3P RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
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$10.7700 / $11.0200 | Buy Now |
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DISTI #
IXTQ60N20L2
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TTI | MOSFETs LINEAR L2 SERIES MOSFET 200V 60A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$10.9800 / $11.2000 | Buy Now |
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DISTI #
IXTQ60N20L2
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TME | Transistor: N-MOSFET, unipolar, 200V, 60A, 540W, TO3P, 330ns Min Qty: 1 | 0 |
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$14.2900 / $19.9800 | RFQ |
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New Advantage Corporation | MOSFET DIS.60A 200V N-CH TO3P LINEARL2 THT RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$24.5000 / $26.2500 | Buy Now |
Part Details for IXTQ60N20L2
IXTQ60N20L2 CAD Models
IXTQ60N20L2 Part Data Attributes
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IXTQ60N20L2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTQ60N20L2
IXYS Corporation
Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-3P | |
| Package Description | PLASTIC, TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Pure Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ60N20L2
This table gives cross-reference parts and alternative options found for IXTQ60N20L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ60N20L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH58N20S | Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | IXYS Corporation | IXTQ60N20L2 vs IXFH58N20S |
| SP001552016 | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Infineon Technologies AG | IXTQ60N20L2 vs SP001552016 |
| IRHNA54260PBF | Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | IXTQ60N20L2 vs IRHNA54260PBF |
| IXTT60N20L2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTQ60N20L2 vs IXTT60N20L2 |
| IXFT50N20 | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, D3PAK-2 | IXYS Corporation | IXTQ60N20L2 vs IXFT50N20 |
| IRHNA53260 | Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | IXTQ60N20L2 vs IRHNA53260 |
| IXTT60N20L2 | Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXTQ60N20L2 vs IXTT60N20L2 |
| IRHNA53260PBF | Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | IXTQ60N20L2 vs IRHNA53260PBF |
| IXTQ60N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXTQ60N20L2 vs IXTQ60N20T |
| SHD239604 | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | IXTQ60N20L2 vs SHD239604 |