Part Details for IXTR170P10P by IXYS Corporation
Overview of IXTR170P10P by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Telecommunications
Automotive
Robotics and Drones
Price & Stock for IXTR170P10P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTR170P10P
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Mouser Electronics | MOSFETs -108.0 Amps -100V 0.013 Rds RoHS: Compliant | 105 |
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$14.8300 / $22.4400 | Buy Now |
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Future Electronics | P-Channel 100 V 108 A 13 mΩ Through Hole PolarP Power Mosfet - ISOPLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 40 Weeks Container: Tube | 0Tube |
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$15.1200 / $15.4200 | Buy Now |
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DISTI #
IXTR170P10P
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TTI | MOSFETs -108.0 Amps -100V 0.013 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$14.6800 / $15.4000 | Buy Now |
Part Details for IXTR170P10P
IXTR170P10P CAD Models
IXTR170P10P Part Data Attributes
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IXTR170P10P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTR170P10P
IXYS Corporation
Power Field-Effect Transistor, 108A I(D), 100V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | ISOPLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 108 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 312 W | |
| Pulsed Drain Current-Max (IDM) | 510 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |