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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1806
|
Newark | Discmosfet N-Ch Depl Mode-D2 To-268Aa/ Tube |Littelfuse IXTT10N100D2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$13.3000 / $14.3100 | Buy Now |
DISTI #
IXTT10N100D2-ND
|
DigiKey | MOSFET N-CH 1000V 10A TO268 Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$14.3498 | Buy Now |
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IXTT10N100D2
Littelfuse Inc
Buy Now
Datasheet
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IXTT10N100D2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 695 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTT10N100D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT10N100D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTT10N100D | Power Field-Effect Transistor, | Littelfuse Inc | IXTT10N100D2 vs IXTT10N100D |
IXTT10N100D | Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTT10N100D2 vs IXTT10N100D |
IXTT10N100D2 | Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTT10N100D2 vs IXTT10N100D2 |