Part Details for IXTT11P50 by IXYS Corporation
Overview of IXTT11P50 by IXYS Corporation
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IXTT11P50
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXTT11P50-ND
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DigiKey | MOSFET P-CH 500V 11A TO268 Min Qty: 1 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$7.5402 / $11.9100 | Buy Now |
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DISTI #
747-IXTT11P50
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Mouser Electronics | MOSFET 11 Amps 500V 0.75 Rds RoHS: Compliant | 0 |
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$11.9100 / $11.9200 | Order Now |
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Future Electronics | Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-268 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$8.9000 / $9.3400 | Buy Now |
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DISTI #
IXTT11P50
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TTI | MOSFET 11 Amps 500V 0.75 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$9.3600 | Buy Now |
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DISTI #
IXTT11P50
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TME | Transistor: P-MOSFET, unipolar, -500V, -11A, 300W, TO268, 500ns Min Qty: 1 | 0 |
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$8.2700 / $11.1700 | RFQ |
Part Details for IXTT11P50
IXTT11P50 CAD Models
IXTT11P50 Part Data Attributes
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IXTT11P50
IXYS Corporation
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Datasheet
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IXTT11P50
IXYS Corporation
Power Field-Effect Transistor, 11A I(D), 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |