Part Details for IXTT11P50 by Littelfuse Inc
Overview of IXTT11P50 by Littelfuse Inc
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IXTT11P50
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1809
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Newark | Disc Mosfet P Channel-Std To-268Aa/ Tube |Littelfuse IXTT11P50 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$7.3600 / $7.9200 | Buy Now |
Part Details for IXTT11P50
IXTT11P50 CAD Models
IXTT11P50 Part Data Attributes
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IXTT11P50
Littelfuse Inc
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Datasheet
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IXTT11P50
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-268, 3/2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 187 pF | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | SILICON |