Datasheets
IXTU05N100 by:

Power Field-Effect Transistor,

Part Details for IXTU05N100 by Littelfuse Inc

Overview of IXTU05N100 by Littelfuse Inc

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Part Details for IXTU05N100

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IXTU05N100 Part Data Attributes

IXTU05N100 Littelfuse Inc
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IXTU05N100 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 0.75 A
Drain-source On Resistance-Max 17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 3 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTU05N100

This table gives cross-reference parts and alternative options found for IXTU05N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTU05N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTA05N100HVTRL Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN IXYS Corporation IXTU05N100 vs IXTA05N100HVTRL
IXTY05N100 Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 IXYS Corporation IXTU05N100 vs IXTY05N100
IXTP05N100 Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IXYS Corporation IXTU05N100 vs IXTP05N100
IXTP05N100 Power Field-Effect Transistor, Littelfuse Inc IXTU05N100 vs IXTP05N100
IXTY05N100 Power Field-Effect Transistor, Littelfuse Inc IXTU05N100 vs IXTY05N100
IXTA05N100HV Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN IXYS Corporation IXTU05N100 vs IXTA05N100HV

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