Part Details for IXTX210P10T by IXYS Corporation
Overview of IXTX210P10T by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXTX210P10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTX210P10T
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Mouser Electronics | MOSFETs P-Channel: Standard MOSFET RoHS: Compliant | 120 |
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$22.1100 / $30.1000 | Buy Now |
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Future Electronics | -100A -210A 0.0075 Ohm P-ch PLUS247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 40 Weeks Container: Tube | 0Tube |
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$20.1500 / $20.5500 | Buy Now |
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DISTI #
IXTX210P10T
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TTI | MOSFETs P-Channel: Standard MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$20.9400 | Buy Now |
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DISTI #
IXTX210P10T
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TME | Transistor: P-MOSFET, TrenchP™, unipolar, -100V, -210A, 1040W Min Qty: 1 | 30 |
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$24.9500 / $33.2000 | Buy Now |
Part Details for IXTX210P10T
IXTX210P10T CAD Models
IXTX210P10T Part Data Attributes
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IXTX210P10T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTX210P10T
IXYS Corporation
Power Field-Effect Transistor, 210A I(D), 100V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, PLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 210 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1040 W | |
| Pulsed Drain Current-Max (IDM) | 800 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |