Datasheets
IXTY08N100D2-TRL by:

Power Field-Effect Transistor,

Part Details for IXTY08N100D2-TRL by IXYS Corporation

Overview of IXTY08N100D2-TRL by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTY08N100D2-TRL

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTY08N100D2-TRL
Mouser Electronics MOSFET Modules IXTY08N100D2 TRL RoHS: Compliant 0
  • 2,500 $1.9600
$1.9600 Order Now
Future Electronics N Chan, 1000V, 800MA, 21OHMs, TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.8300
$1.8300 Buy Now
DISTI # IXTY08N100D2-TRL
TTI MOSFET Modules IXTY08N100D2 TRL Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $1.9300
  • 5,000 $1.8900
$1.8900 / $1.9300 Buy Now

Part Details for IXTY08N100D2-TRL

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IXTY08N100D2-TRL Part Data Attributes

IXTY08N100D2-TRL IXYS Corporation
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IXTY08N100D2-TRL IXYS Corporation Power Field-Effect Transistor,
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max 21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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