-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH1912
|
Newark | Disc Mosfet N-Ch Std-Polar To-252D/ Tube |Littelfuse IXTY1R4N120P RoHS: Not Compliant Min Qty: 350 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.9800 / $2.6500 | Buy Now |
DISTI #
IXTY1R4N120P-ND
|
DigiKey | MOSFET N-CH 1200V 1.4A TO252 Min Qty: 1 Lead time: 57 Weeks Container: Tube |
316 In Stock |
|
$1.8611 / $3.9900 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IXTY1R4N120P
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTY1R4N120P
Littelfuse Inc
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 1.4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 86 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Time@Peak Reflow Temperature-Max (s) | 10 |