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Transistors IGBTs IXXK110N65B4H1

IXXK110N65B4H1
Description: Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,

Overview of IXXK110N65B4H1 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 7 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for IXXK110N65B4H1 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # IXXK110N65B4H1-ND
DigiKey IGBT 650V 240A 880W TO264 Min Qty: 1 Lead time: 46 Weeks Container: Tube 284
In Stock
  • 1 $15.3100
  • 25 $13.9668
$13.9668 / $15.3100 Buy Now
DISTI # 747-IXXK110N65B4H1
Mouser Electronics IGBTs 650V/240A TRENCH IGBT GENX4 XPT RoHS: Compliant 501
  • 1 $21.7700
  • 10 $19.3500
  • 25 $18.0500
  • 50 $17.4900
  • 100 $16.9200
  • 250 $15.7900
  • 500 $14.4400
$14.4400 / $21.7700 Buy Now
Future Electronics IGBT DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 46 Weeks Container: Tube 0
Tube
  • 25 $15.3500
  • 50 $15.2600
  • 75 $15.2100
  • 125 $15.1500
  • 250 $15.0100
$15.0100 / $15.3500 Buy Now
Future Electronics IGBT DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 46 Weeks Container: Tube 0
Tube
  • 25 $15.3500
  • 50 $15.2600
  • 75 $15.2100
  • 125 $15.1500
  • 250 $15.0100
$15.0100 / $15.3500 Buy Now
DISTI # IXXK110N65B4H1
TTI IGBTs 650V/240A TRENCH IGBT GENX4 XPT Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $11.5800
$11.5800 Buy Now
DISTI # IXXK110N65B4H1
TME Transistor: IGBT, GenX4™, 650V, 110A, 880W, TO264 Min Qty: 1 300
  • 1 $26.2400
  • 3 $23.6700
  • 10 $20.8800
  • 25 $18.7600
$18.7600 / $26.2400 Buy Now
Sense Electronic Company Limited TO-264 2559
RFQ

CAD Models for IXXK110N65B4H1 by IXYS Corporation
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Part Data Attributes for IXXK110N65B4H1 by IXYS Corporation
Parametric Data

IXXK110N65B4H1
IXYS Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
250 A
Collector-Emitter Voltage-Max
650 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-264AA
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
880 W
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
250 ns
Turn-on Time-Nom (ton)
65 ns
VCEsat-Max
2.1 V
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  1. IXXK110N65B4H1
    IXYS Corporation
    Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,
    VS

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