Datasheets
IXXX160N65B4 by:

Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,

Part Details for IXXX160N65B4 by IXYS Corporation

Overview of IXXX160N65B4 by IXYS Corporation

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Price & Stock for IXXX160N65B4

Part # Distributor Description Stock Price Buy
DISTI # IXXX160N65B4-ND
DigiKey IGBT 650V 310A 940W PLUS247 Min Qty: 1 Lead time: 46 Weeks Container: Tube 525
In Stock
  • 1 $19.3500
  • 30 $15.6613
  • 120 $14.7400
  • 510 $13.3581
$13.3581 / $19.3500 Buy Now
DISTI # 747-IXXX160N65B4
Mouser Electronics IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT RoHS: Compliant 331
  • 1 $19.3500
  • 10 $17.0500
  • 30 $14.8700
  • 60 $14.4900
  • 120 $13.8800
  • 270 $13.6700
  • 510 $13.3400
$13.3400 / $19.3500 Buy Now
Future Electronics IGBT Transistors 650V 310A TRENCH IGBT GENX4 XPT RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $12.5000
  • 60 $12.4300
  • 90 $12.3900
  • 150 $12.3400
  • 300 $12.2300
$12.2300 / $12.5000 Buy Now
DISTI # IXXX160N65B4
TTI IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $12.4700
$12.4700 Buy Now
DISTI # IXXX160N65B4
TME Transistor: IGBT, GenX4™, 650V, 160A, 940W, PLUS247™ Min Qty: 1 0
  • 1 $19.5500
  • 3 $17.5100
  • 10 $15.5700
  • 30 $13.8600
$13.8600 / $19.5500 RFQ

Part Details for IXXX160N65B4

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IXXX160N65B4 Part Data Attributes

IXXX160N65B4 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXXX160N65B4 IXYS Corporation Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 310 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 940 W
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 380 ns
Turn-on Time-Nom (ton) 93 ns
VCEsat-Max 1.8 V

Alternate Parts for IXXX160N65B4

This table gives cross-reference parts and alternative options found for IXXX160N65B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXXX160N65B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXXK160N65C4 Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel, IXYS Corporation IXXX160N65B4 vs IXXK160N65C4
IXXX160N65C4 Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel, IXYS Corporation IXXX160N65B4 vs IXXX160N65C4

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