Part Details for IXXX160N65B4 by IXYS Corporation
Overview of IXXX160N65B4 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXXX160N65B4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXXX160N65B4-ND
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DigiKey | IGBT 650V 310A 940W PLUS247 Min Qty: 1 Lead time: 46 Weeks Container: Tube |
525 In Stock |
|
$13.3581 / $19.3500 | Buy Now |
DISTI #
747-IXXX160N65B4
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Mouser Electronics | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT RoHS: Compliant | 331 |
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$13.3400 / $19.3500 | Buy Now |
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Future Electronics | IGBT Transistors 650V 310A TRENCH IGBT GENX4 XPT RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$12.2300 / $12.5000 | Buy Now |
DISTI #
IXXX160N65B4
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TTI | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$12.4700 | Buy Now |
DISTI #
IXXX160N65B4
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TME | Transistor: IGBT, GenX4™, 650V, 160A, 940W, PLUS247™ Min Qty: 1 | 0 |
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$13.8600 / $19.5500 | RFQ |
Part Details for IXXX160N65B4
IXXX160N65B4 CAD Models
IXXX160N65B4 Part Data Attributes
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IXXX160N65B4
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXXX160N65B4
IXYS Corporation
Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 310 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 940 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 380 ns | |
Turn-on Time-Nom (ton) | 93 ns | |
VCEsat-Max | 1.8 V |
Alternate Parts for IXXX160N65B4
This table gives cross-reference parts and alternative options found for IXXX160N65B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXXX160N65B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXXK160N65C4 | Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel, | IXYS Corporation | IXXX160N65B4 vs IXXK160N65C4 |
IXXX160N65C4 | Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel, | IXYS Corporation | IXXX160N65B4 vs IXXX160N65C4 |