Datasheets
IXYA20N120C4HV by:

Insulated Gate Bipolar Transistor,

Part Details for IXYA20N120C4HV by Littelfuse Inc

Overview of IXYA20N120C4HV by Littelfuse Inc

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Part Details for IXYA20N120C4HV

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IXYA20N120C4HV Part Data Attributes:

IXYA20N120C4HV Littelfuse Inc
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IXYA20N120C4HV Littelfuse Inc Insulated Gate Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection COLLECTOR
Collector Current-Max (IC) 68 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 286 ns
Turn-on Time-Nom (ton) 50 ns
VCEsat-Max 2.5 V

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