Part Details for IXYH120N65A5 by IXYS Corporation
Overview of IXYH120N65A5 by IXYS Corporation
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IXYH120N65A5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
238-IXYH120N65A5-ND
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DigiKey | IGBT 650V 120A X5 XPT TO-247 Min Qty: 1 Lead time: 46 Weeks Container: Tube |
56 In Stock |
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$7.6745 / $12.1200 | Buy Now |
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DISTI #
747-IXYH120N65A5
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Mouser Electronics | IGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 RoHS: Compliant | 21 |
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$7.6600 / $12.7300 | Buy Now |
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DISTI #
IXYH120N65A5
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TTI | IGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$7.8100 | Buy Now |
Part Details for IXYH120N65A5
IXYH120N65A5 CAD Models
IXYH120N65A5 Part Data Attributes
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IXYH120N65A5
IXYS Corporation
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Datasheet
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IXYH120N65A5
IXYS Corporation
Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel, TO-247,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | unknown | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 290 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 530 ns | |
| Turn-on Time-Nom (ton) | 87 ns | |
| VCEsat-Max | 1.35 V |