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IXYH20N65C3 by:

Insulated Gate Bipolar Transistor,

Part Details for IXYH20N65C3 by IXYS Corporation

Overview of IXYH20N65C3 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXYH20N65C3

Part # Distributor Description Stock Price Buy
DISTI # IXYH20N65C3-ND
DigiKey IGBT 650V 50A 230W TO247AD Min Qty: 300 Lead time: 46 Weeks Container: Tube Temporarily Out of Stock
  • 300 $2.8367
$2.8367 Buy Now
DISTI # 747-IXYH20N65C3
Mouser Electronics IGBT Transistors IGBT XPT-GENX3 RoHS: Compliant 0
  • 1 $4.4200
  • 10 $3.7200
  • 30 $3.5100
  • 120 $2.8300
$2.8300 / $4.4200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.4200
$2.4200 Buy Now
DISTI # IXYH20N65C3
TTI IGBT Transistors IGBT XPT-GENX3 Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $2.2600
$2.2600 Buy Now
DISTI # IXYH20N65C3
TME Transistor: IGBT, GenX3™, 650V, 20A, 230W, TO247-3 Min Qty: 1 0
  • 1 $3.6200
  • 3 $3.2600
  • 10 $2.8800
  • 30 $2.5900
$2.5900 / $3.6200 RFQ

Part Details for IXYH20N65C3

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IXYH20N65C3 Part Data Attributes:

IXYH20N65C3 IXYS Corporation
Buy Now Datasheet
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IXYH20N65C3 IXYS Corporation Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 132 ns
Turn-on Time-Nom (ton) 51 ns
VCEsat-Max 2.5 V

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