Datasheets
IXYH40N65C3H1 by:

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel,

Part Details for IXYH40N65C3H1 by IXYS Corporation

Overview of IXYH40N65C3H1 by IXYS Corporation

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IXYH40N65C3H1

Part # Distributor Description Stock Price Buy
DISTI # 03AH2055
Newark Disc Igbt Xpt-Genx3 To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXYH40N65C3H1 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $6.8400
  • 500 $6.3600
$6.3600 / $6.8400 Buy Now
DISTI # IXYH40N65C3H1-ND
DigiKey IGBT 650V 80A 300W TO247 Min Qty: 300 Lead time: 46 Weeks Container: Tube Temporarily Out of Stock
  • 300 $7.8376
$7.8376 Buy Now
DISTI # 747-IXYH40N65C3H1
Mouser Electronics IGBT Transistors 650V/80A XPT Copacked TO-247 RoHS: Compliant 0
  • 1 $11.6600
  • 10 $10.0000
  • 30 $7.8400
$7.8400 / $11.6600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $5.9000
$5.9000 Buy Now
DISTI # IXYH40N65C3H1
TTI IGBT Transistors 650V/80A XPT Copacked TO-247 Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $6.6300
$6.6300 Buy Now
DISTI # IXYH40N65C3H1
TME Transistor: IGBT, GenX3™, 650V, 40A, 300W, TO247-3 Min Qty: 1 0
  • 1 $9.5700
  • 3 $8.6000
  • 10 $7.6100
  • 30 $6.8300
$6.8300 / $9.5700 RFQ
DISTI # 2470019
element14 Asia-Pacific IGBT, SINGLE, 650V, 40A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $12.1044
  • 5 $10.7627
  • 10 $9.4211
  • 50 $9.0357
  • 100 $8.6502
  • 250 $8.1388
$8.1388 / $12.1044 Buy Now
DISTI # 2470019
Farnell IGBT, SINGLE, 650V, 40A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $13.5769
  • 5 $11.8830
  • 10 $9.8502
  • 50 $8.8212
  • 100 $8.1436
  • 250 $7.6041
$7.6041 / $13.5769 Buy Now

Part Details for IXYH40N65C3H1

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IXYH40N65C3H1 Part Data Attributes:

IXYH40N65C3H1 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXYH40N65C3H1 IXYS Corporation Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e3
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

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