Part Details for IXYH50N65C3D1 by IXYS Corporation
Overview of IXYH50N65C3D1 by IXYS Corporation
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXYH50N65C3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXYH50N65C3D1
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Mouser Electronics | IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD RoHS: Compliant | 0 |
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$5.7700 / $6.5800 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$6.1100 | Buy Now |
|
DISTI #
IXYH50N65C3D1
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TME | Transistor: IGBT, GenX3™, 650V, 50A, 600W, TO247-3 Min Qty: 1 | 0 |
|
$6.5100 / $9.1200 | RFQ |
|
DISTI #
2470020
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Farnell | IGBT, SINGLE, 650V, 50A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 0 Days Container: Each | 0 |
|
$3.7328 / $4.6566 | Buy Now |
Part Details for IXYH50N65C3D1
IXYH50N65C3D1 CAD Models
IXYH50N65C3D1 Part Data Attributes
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IXYH50N65C3D1
IXYS Corporation
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Datasheet
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IXYH50N65C3D1
IXYS Corporation
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 132 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 145 ns | |
| Turn-on Time-Nom (ton) | 56 ns | |
| VCEsat-Max | 2.1 V |