Part Details for IXYK110N120C4 by Littelfuse Inc
Overview of IXYK110N120C4 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IXYK110N120C4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AK5295
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Newark | Disc Igbt Xpt Gen4 1200V 110A To264/ Tube |Littelfuse IXYK110N120C4 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$15.2200 | Buy Now |
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Ozdisan Elektronik | IGBT DIS.SINGLE 110A 1200V GENX4 TO264 THT | 0 |
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$29.8051 / $31.8915 | RFQ |
Part Details for IXYK110N120C4
IXYK110N120C4 CAD Models
IXYK110N120C4 Part Data Attributes
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IXYK110N120C4
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXYK110N120C4
Littelfuse Inc
Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, TO-264AA,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 310 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1360 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 357 ns | |
| Turn-on Time-Nom (ton) | 88 ns | |
| VCEsat-Max | 2.4 V |