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Part Details for IXYP20N65C3D1 by Littelfuse Inc
Overview of IXYP20N65C3D1 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXYP20N65C3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AK0508
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Newark | Transistor, 650V, 50A, To-220Ab Rohs Compliant: Yes |Littelfuse IXYP20N65C3D1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 516 |
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$1.8200 / $3.7300 | Buy Now |
|
DISTI #
70796309
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Verical | Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2334 | Americas - 188 |
|
$1.6418 / $3.1481 | Buy Now |
Part Details for IXYP20N65C3D1
IXYP20N65C3D1 CAD Models
IXYP20N65C3D1 Part Data Attributes:
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IXYP20N65C3D1
Littelfuse Inc
Buy Now
Datasheet
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IXYP20N65C3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 132 ns | |
| Turn-on Time-Nom (ton) | 51 ns | |
| VCEsat-Max | 2.5 V |