Part Details for IXYT20N120C3D1HV by Littelfuse Inc
Overview of IXYT20N120C3D1HV by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXYT20N120C3D1HV
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2117
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Newark | Disc Igbt Xpt-Genx3 To-268Aa/ Tube |Littelfuse IXYT20N120C3D1HV Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$6.3900 / $6.8800 | Buy Now |
Part Details for IXYT20N120C3D1HV
IXYT20N120C3D1HV CAD Models
IXYT20N120C3D1HV Part Data Attributes
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IXYT20N120C3D1HV
Littelfuse Inc
Buy Now
Datasheet
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IXYT20N120C3D1HV
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 36 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 220 ns | |
Turn-on Time-Nom (ton) | 60 ns | |
VCEsat-Max | 3.4 V |