Part Details for J2N3700UB1 by STMicroelectronics
Overview of J2N3700UB1 by STMicroelectronics
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for J2N3700UB1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
J2N3700UB1
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Avnet Americas | Trans GP BJT NPN 80V 1A 6-Pin UB Waffle - Bulk (Alt: J2N3700UB1) RoHS: Compliant Min Qty: 25 Package Multiple: 10 Container: Bulk | 0 |
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RFQ | |
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DISTI #
J2N3700UB1
|
Avnet Americas | Trans GP BJT NPN 80V 1A 6-Pin UB Waffle - Bulk (Alt: J2N3700UB1) RoHS: Compliant Min Qty: 25 Package Multiple: 10 Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
J2N3700UB1
|
Avnet Americas | Trans GP BJT NPN 80V 1A 6-Pin UB Waffle - Bulk (Alt: J2N3700UB1) RoHS: Compliant Min Qty: 25 Package Multiple: 10 Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
J2N3700UB1
|
Avnet Silica | Trans GP BJT NPN 80V 1A 6-Pin UB Waffle (Alt: J2N3700UB1) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 3 Days | Silica - 0 |
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Part Details for J2N3700UB1
J2N3700UB1 CAD Models
J2N3700UB1 Part Data Attributes
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J2N3700UB1
STMicroelectronics
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Datasheet
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Compare Parts:
J2N3700UB1
STMicroelectronics
Rad-Hard 80 V, 1 A NPN transistor
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| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 12 pF | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 15 | |
| JESD-30 Code | R-PDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.76 W | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.58 V |