Part Details for JAN2N5416 by New England Semiconductor
Overview of JAN2N5416 by New England Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for JAN2N5416
JAN2N5416 CAD Models
JAN2N5416 Part Data Attributes
|
|
JAN2N5416
New England Semiconductor
Buy Now
Datasheet
|
Compare Parts:
JAN2N5416
New England Semiconductor
Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 15 pF | |
| Collector-Emitter Voltage-Max | 300 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1.5 W | |
| Power Dissipation-Max (Abs) | 10 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 15 MHz | |
| VCEsat-Max | 2 V |