Datasheets
JAN2N6193 by:

Small Signal Bipolar Transistor,

Part Details for JAN2N6193 by VPT Components

Overview of JAN2N6193 by VPT Components

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for JAN2N6193

Part # Distributor Description Stock Price Buy
DISTI # JAN2N6193
Avnet Americas Power Silicon Transistor PNP 100V 5A Through Hole 3-Pin TO-39 Bulk - Bulk (Alt: JAN2N6193) RoHS: Not Compliant Min Qty: 191 Package Multiple: 1 Container: Bulk 0
  • 191 $7.4550
  • 200 $7.3500
  • 390 $7.1400
  • 960 $6.9825
  • 2,000 $6.7200
  • 9,600 $6.5625
  • 20,000 $6.4050
$6.4050 / $7.4550 Buy Now
DISTI # 2N6193JAN
Avnet Americas Power Silicon Transistor PNP 100V 5A Through Hole 3-Pin TO-39 Bulk - Bulk (Alt: 2N6193JAN) RoHS: Not Compliant Min Qty: 137 Package Multiple: 1 Container: Bulk 0
RFQ
DISTI # JAN2N6193
TTI Bipolar Transistors - BJT MIL-PRF-19500/561 Min Qty: 95 Package Multiple: 1 Container: Bulk Americas - 0
  • 95 $9.3700
$9.3700 Buy Now

Part Details for JAN2N6193

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JAN2N6193 Part Data Attributes:

JAN2N6193 VPT Components
Buy Now Datasheet
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JAN2N6193 VPT Components Small Signal Bipolar Transistor,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer VPT COMPONENTS
Package Description TO-39, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 300 pF
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-205AD
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 17.5 W
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 202 ns
Turn-on Time-Max (ton) 200 ns
VCEsat-Max 1.2 V

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