There are no models available for this part yet.
Overview of JANSF2N7382 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 8 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for JANSF2N7382 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
JANSF2N7382
|
Avnet Americas | Transistor MOSFET P-Channel 100V 11A 3-Pin TO-257AA - Bulk (Alt: JANSF2N7382) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
CAD Models for JANSF2N7382 by Infineon Technologies AG
Part Data Attributes for JANSF2N7382 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
RADIATION HARDENED, HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
150 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
11 A
|
Drain-source On Resistance-Max
|
0.35 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-257AA
|
JESD-30 Code
|
R-MSFM-P3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
METAL
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
75 W
|
Pulsed Drain Current-Max (IDM)
|
44 A
|
Qualification Status
|
Qualified
|
Reference Standard
|
MIL-19500/615
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
PIN/PEG
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for JANSF2N7382
This table gives cross-reference parts and alternative options found for JANSF2N7382. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSF2N7382, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JANSR2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Microsemi Corporation | JANSF2N7382 vs JANSR2N7382 |
JANSR2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | JANSF2N7382 vs JANSR2N7382 |
JANTXVF2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Microsemi Corporation | JANSF2N7382 vs JANTXVF2N7382 |
IRHY9130CMSCS | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | JANSF2N7382 vs IRHY9130CMSCS |
IRHY9130CMSCSPBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | JANSF2N7382 vs IRHY9130CMSCSPBF |
IRHY93130CM | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Infineon Technologies AG | JANSF2N7382 vs IRHY93130CM |
IRHY9130CM | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Infineon Technologies AG | JANSF2N7382 vs IRHY9130CM |
IRHY93130CMPBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | JANSF2N7382 vs IRHY93130CMPBF |
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