There are no models available for this part yet.
Overview of JANSF2N7425U by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for JANSF2N7425U by International Rectifier
Part Data Attributes for JANSF2N7425U by International Rectifier
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Package Description
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
500 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
38 A
|
Drain-source On Resistance-Max
|
0.071 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-CBCC-N3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
CHIP CARRIER
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
3 W
|
Pulsed Drain Current-Max (IDM)
|
152 A
|
Qualification Status
|
Not Qualified
|
Reference Standard
|
MIL-19500/655
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for JANSF2N7425U
This table gives cross-reference parts and alternative options found for JANSF2N7425U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSF2N7425U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHNA9160 | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | JANSF2N7425U vs IRHNA9160 |
IRHNA93160 | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | JANSF2N7425U vs IRHNA93160 |
IRHNA9160PBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | JANSF2N7425U vs IRHNA9160PBF |
JANSF2N7425U | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | JANSF2N7425U vs JANSF2N7425U |
JANSR2N7425U | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | JANSF2N7425U vs JANSR2N7425U |
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