Part Details for JANSF2N7580T1 by Infineon Technologies AG
Overview of JANSF2N7580T1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for JANSF2N7580T1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSF2N7580T1
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Avnet Americas | Transistor MOSFET N-Channel 100V 45A 3-Pin TO-254AA - Bulk (Alt: JANSF2N7580T1) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for JANSF2N7580T1
JANSF2N7580T1 CAD Models
JANSF2N7580T1 Part Data Attributes
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JANSF2N7580T1
Infineon Technologies AG
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Datasheet
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JANSF2N7580T1
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 512 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 45 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-XSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for JANSF2N7580T1
This table gives cross-reference parts and alternative options found for JANSF2N7580T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSF2N7580T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRHMS67160PBF | Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN | Infineon Technologies AG | JANSF2N7580T1 vs IRHMS67160PBF |
IRHMS63160 | Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN | International Rectifier | JANSF2N7580T1 vs IRHMS63160 |
JANTXVR2N7580T1 | Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANSF2N7580T1 vs JANTXVR2N7580T1 |