Part Details for JANSR2N7433 by Infineon Technologies AG
Overview of JANSR2N7433 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for JANSR2N7433
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSR2N7433
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Avnet Americas | Transistor MOSFET N-Channel 200V 35A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7433) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
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DISTI #
JANSR2N7433
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Avnet Americas | Transistor MOSFET N-Channel 200V 35A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7433) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
Part Details for JANSR2N7433
JANSR2N7433 CAD Models
JANSR2N7433 Part Data Attributes:
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JANSR2N7433
Infineon Technologies AG
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Datasheet
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Compare Parts:
JANSR2N7433
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, S-CSFM-P3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 360 pF | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-CSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/663 | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 330 ns | |
| Turn-on Time-Max (ton) | 250 ns |
Alternate Parts for JANSR2N7433
This table gives cross-reference parts and alternative options found for JANSR2N7433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHM7260PBF | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7433 vs IRHM7260PBF |
| IRHM8260 | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7433 vs IRHM8260 |
| JANTXVH2N7433 | Power Field-Effect Transistor, 35A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | JANSR2N7433 vs JANTXVH2N7433 |
| IRHM8260PBF | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7433 vs IRHM8260PBF |
| JANSR2N7433 | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7433 vs JANSR2N7433 |
| IRHM8260 | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETICALLY SEALED, CERAMIC PACKAGE-3 | Infineon Technologies AG | JANSR2N7433 vs IRHM8260 |