Datasheets
JANSR2N7467U2A by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for JANSR2N7467U2A by Infineon Technologies AG

Overview of JANSR2N7467U2A by Infineon Technologies AG

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Price & Stock for JANSR2N7467U2A

Part # Distributor Description Stock Price Buy
DISTI # JANSR2N7467U2A
Avnet Americas Transistor MOSFET N-Channel 30V 75A 3-Pin SupIR-SMD - Bulk (Alt: JANSR2N7467U2A) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
RFQ

Part Details for JANSR2N7467U2A

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JANSR2N7467U2A Part Data Attributes

JANSR2N7467U2A Infineon Technologies AG
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JANSR2N7467U2A Infineon Technologies AG Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JESD-30 Code S-CSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 300 A
Reference Standard MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 130 ns
Turn-on Time-Max (ton) 160 ns

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