Part Details for JANSR2N7493T2 by Infineon Technologies AG
Overview of JANSR2N7493T2 by Infineon Technologies AG
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Part Details for JANSR2N7493T2
JANSR2N7493T2 CAD Models
JANSR2N7493T2 Part Data Attributes
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JANSR2N7493T2
Infineon Technologies AG
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Datasheet
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JANSR2N7493T2
Infineon Technologies AG
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 173 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 11.7 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.71 W | |
Pulsed Drain Current-Max (IDM) | 47 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/701 | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |