Part Details for JANSR2N7579U2A by Infineon Technologies AG
Overview of JANSR2N7579U2A by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Price & Stock for JANSR2N7579U2A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSR2N7579U2A
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Avnet Americas | Transistor MOSFET N-Channel 100V 56A 3-Pin SupIR-SMD - Bulk (Alt: JANSR2N7579U2A) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for JANSR2N7579U2A
JANSR2N7579U2A CAD Models
JANSR2N7579U2A Part Data Attributes
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JANSR2N7579U2A
Infineon Technologies AG
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Datasheet
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JANSR2N7579U2A
Infineon Technologies AG
Power Field-Effect Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 462 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 56 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 20 pF | |
JESD-30 Code | S-CSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 224 A | |
Reference Standard | MIL-19500; MIL-STD-750; RH - 100K Rad(Si) | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 150 ns | |
Turn-on Time-Max (ton) | 200 ns |