Part Details for JANTX2N6758 by Intersil Corporation
Overview of JANTX2N6758 by Intersil Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6758
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | MOSFET Transistor, N-Channel, TO-3 | 2 |
|
$26.2568 | Buy Now |
Part Details for JANTX2N6758
JANTX2N6758 CAD Models
JANTX2N6758 Part Data Attributes:
|
JANTX2N6758
Intersil Corporation
Buy Now
Datasheet
|
Compare Parts:
JANTX2N6758
Intersil Corporation
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERSIL CORP | |
Part Package Code | TO-3 | |
Package Description | TO-3, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | RADIATION HARDENED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 150 pF | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Reference Standard | MILITARY STANDARD (USA) | |
Surface Mount | NO | |
Terminal Finish | NOT SPECIFIED | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 90 ns | |
Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for JANTX2N6758
This table gives cross-reference parts and alternative options found for JANTX2N6758. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6758, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF231 | 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | JANTX2N6758 vs IRF231 |
IRF233 | Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor Products Inc | JANTX2N6758 vs IRF233 |
JANHCA2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANTX2N6758 vs JANHCA2N6758 |
IRF231 | 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | JANTX2N6758 vs IRF231 |
JANTXV2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | JANTX2N6758 vs JANTXV2N6758 |
IRF230 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | JANTX2N6758 vs IRF230 |
JAN2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | International Rectifier | JANTX2N6758 vs JAN2N6758 |
IRF230 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | JANTX2N6758 vs IRF230 |
2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | JANTX2N6758 vs 2N6758 |
IRF230PBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | JANTX2N6758 vs IRF230PBF |