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Transistors Power Field-Effect Transistors JANTX2N6792

JANTX2N6792
Description: Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Overview of JANTX2N6792 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for JANTX2N6792 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics N-Cannel 400 V 1.9 Ohm 20 W Through Hole HEXFET Transistor - TO-39 RoHS: Not Compliant pbFree: No Min Qty: 100 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $25.7100
$25.7100 Buy Now

CAD Models for JANTX2N6792 by Infineon Technologies AG
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Part Data Attributes for JANTX2N6792 by Infineon Technologies AG
Parametric Data

JANTX2N6792
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
1.9 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Qualified
Reference Standard
MIL-19500/555
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. JANTX2N6792
    Infineon Technologies AG
    Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
    VS

Alternate Parts for JANTX2N6792

This table gives cross-reference parts and alternative options found for JANTX2N6792. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6792, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6792R1 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6792 vs 2N6792R1
2N6792R1 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors JANTX2N6792 vs 2N6792R1
2N6792PBF Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTX2N6792 vs 2N6792PBF
IRFF320R1 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors JANTX2N6792 vs IRFF320R1
JANTX2N6792 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6792 vs JANTX2N6792
JAN2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 International Rectifier JANTX2N6792 vs JAN2N6792
JANTX2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6792 vs JANTX2N6792
JANTXV2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6792 vs JANTXV2N6792
JANTXV2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG JANTX2N6792 vs JANTXV2N6792
2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6792 vs 2N6792
Part Number Description Manufacturer Compare
IRFF320PBF Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier JANTX2N6792 vs IRFF320PBF
JANTX2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation JANTX2N6792 vs JANTX2N6792
JANTX2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors JANTX2N6792 vs JANTX2N6792
IRFF320 2.5A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC JANTX2N6792 vs IRFF320
2N6792TX 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC JANTX2N6792 vs 2N6792TX
2N6792PBF Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTX2N6792 vs 2N6792PBF
JANTXV2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6792 vs JANTXV2N6792
2N6792TX 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6792 vs 2N6792TX
JANTX2N6792 Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6792 vs JANTX2N6792
JANTX2N6792 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6792 vs JANTX2N6792

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