Part Details for JANTX2N7228U by Infineon Technologies AG
Overview of JANTX2N7228U by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for JANTX2N7228U
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | JANTX Series 500 V 12 A Surface Mount N-Channel Mosfet - TO-267AB RoHS: Non Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Bulk | 0Bulk |
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$177.4800 / $186.3600 | Buy Now |
Part Details for JANTX2N7228U
JANTX2N7228U CAD Models
JANTX2N7228U Part Data Attributes
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JANTX2N7228U
Infineon Technologies AG
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Datasheet
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JANTX2N7228U
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HERMETIC SEALED, SMD1, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 750 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.515 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/592 | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N7228U
This table gives cross-reference parts and alternative options found for JANTX2N7228U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N7228U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX2N7228U | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U-PKG-3 | Microsemi Corporation | JANTX2N7228U vs JANTX2N7228U |
IRFN450R4 | Power Field-Effect Transistor, 10.4A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | JANTX2N7228U vs IRFN450R4 |
IRFN450 | Power Field-Effect Transistor, 10.4A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | JANTX2N7228U vs IRFN450 |
IRFN450PBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | JANTX2N7228U vs IRFN450PBF |
2N7228U | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U-PKG-3 | Microsemi Corporation | JANTX2N7228U vs 2N7228U |
IRFN450R4 | 10.4A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N7228U vs IRFN450R4 |
2N7228U | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANTX2N7228U vs 2N7228U |
JANTXV2N7228U | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | JANTX2N7228U vs JANTXV2N7228U |
IRFN450 | 10.4A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N7228U vs IRFN450 |
IRFN450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | JANTX2N7228U vs IRFN450 |