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Transistors Power Field-Effect Transistors JANTX2N7335

JANTX2N7335
Description: Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN

Overview of JANTX2N7335 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems

Price & Stock for JANTX2N7335 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics 100V, 0.75A, 14-Pin MO-036AB. RoHS: Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Bag 0
Bag
  • 1 $124.6700
  • 3 $122.6100
  • 4 $122.0800
  • 10 $120.3900
  • 15 $118.7300
$118.7300 / $124.6700 Buy Now

CAD Models for JANTX2N7335 by Infineon Technologies AG
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Part Data Attributes for JANTX2N7335 by Infineon Technologies AG
Parametric Data

JANTX2N7335
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
MO-036AB, 14 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
75 mJ
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
0.75 A
Drain-source On Resistance-Max
1.73 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-036AB
JESD-30 Code
R-CDIP-T14
JESD-609 Code
e0
Number of Elements
4
Number of Terminals
14
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
1.4 W
Pulsed Drain Current-Max (IDM)
3 A
Qualification Status
Qualified
Reference Standard
MIL-19500/599
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. JANTX2N7335
    Infineon Technologies AG
    Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
    VS

Alternate Parts for JANTX2N7335

This table gives cross-reference parts and alternative options found for JANTX2N7335. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N7335, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTXV2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Infineon Technologies AG JANTX2N7335 vs JANTXV2N7335
IRFG9110PBF Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN International Rectifier JANTX2N7335 vs IRFG9110PBF
2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.4ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB International Rectifier JANTX2N7335 vs 2N7335
JANTX2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Microsemi Corporation JANTX2N7335 vs JANTX2N7335
Part Number Description Manufacturer Compare
JANTXV2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Infineon Technologies AG JANTX2N7335 vs JANTXV2N7335
JANTX2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Defense Logistics Agency JANTX2N7335 vs JANTX2N7335
JANTXV2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Defense Logistics Agency JANTX2N7335 vs JANTXV2N7335
JANTX2N7335 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Microsemi Corporation JANTX2N7335 vs JANTX2N7335
IRFG9110 Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Infineon Technologies AG JANTX2N7335 vs IRFG9110
IRFG9110PBF Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN International Rectifier JANTX2N7335 vs IRFG9110PBF

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