Part Details for JANTXV2N5339 by New England Semiconductor
Overview of JANTXV2N5339 by New England Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for JANTXV2N5339
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | SMALL SIGNAL BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-39 | 1 |
|
$20.0000 | Buy Now |
|
|
Quest Components | SMALL SIGNAL BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-39 | 3 |
|
$27.8492 | Buy Now |
Part Details for JANTXV2N5339
JANTXV2N5339 CAD Models
JANTXV2N5339 Part Data Attributes
|
|
JANTXV2N5339
New England Semiconductor
Buy Now
Datasheet
|
Compare Parts:
JANTXV2N5339
New England Semiconductor
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 6 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 30 MHz | |
| Turn-off Time-Max (toff) | 2200 ns | |
| Turn-on Time-Max (ton) | 200 ns |