Part Details for JANTXVR2N7467U2 by Infineon Technologies AG
Overview of JANTXVR2N7467U2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for JANTXVR2N7467U2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANTXVR2N7467U2
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Avnet Americas | Transistor MOSFET N-Channel 30V 75A 3-Pin TO-276AC - Bulk (Alt: JANTXVR2N7467U2) Min Qty: 500 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for JANTXVR2N7467U2
JANTXVR2N7467U2 CAD Models
JANTXVR2N7467U2 Part Data Attributes
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JANTXVR2N7467U2
Infineon Technologies AG
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Datasheet
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JANTXVR2N7467U2
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/683A | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |