Part Details for K4B2G0446D-HYH9 by Samsung Semiconductor
Overview of K4B2G0446D-HYH9 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4B2G0446D-HYH9
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 30 |
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RFQ |
Part Details for K4B2G0446D-HYH9
K4B2G0446D-HYH9 CAD Models
K4B2G0446D-HYH9 Part Data Attributes
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K4B2G0446D-HYH9
Samsung Semiconductor
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Datasheet
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K4B2G0446D-HYH9
Samsung Semiconductor
DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | TFBGA, BGA78,9X13,32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.255 ns | |
Additional Feature | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | |
Clock Frequency-Max (fCLK) | 667 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 8 | |
JESD-30 Code | R-PBGA-B78 | |
Length | 11 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR3L DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 78 | |
Number of Words | 536870912 words | |
Number of Words Code | 512000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 512MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA78,9X13,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 8 | |
Standby Current-Max | 0.01 A | |
Supply Current-Max | 0.125 mA | |
Supply Voltage-Max (Vsup) | 1.45 V | |
Supply Voltage-Min (Vsup) | 1.283 V | |
Supply Voltage-Nom (Vsup) | 1.35 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 7.5 mm |
Alternate Parts for K4B2G0446D-HYH9
This table gives cross-reference parts and alternative options found for K4B2G0446D-HYH9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B2G0446D-HYH9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4B2G0446D-HYH90 | DDR DRAM, 512MX4, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | K4B2G0446D-HYH9 vs K4B2G0446D-HYH90 |
K4B2G0446D-HYH9T | DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78, | Samsung Semiconductor | K4B2G0446D-HYH9 vs K4B2G0446D-HYH9T |