Part Details for K4B2G0846D-HYK0 by Samsung Semiconductor
Overview of K4B2G0846D-HYK0 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Computing and Data Storage
Price & Stock for K4B2G0846D-HYK0
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 25 |
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$9.0000 / $12.0000 | Buy Now |
Part Details for K4B2G0846D-HYK0
K4B2G0846D-HYK0 CAD Models
K4B2G0846D-HYK0 Part Data Attributes
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K4B2G0846D-HYK0
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K4B2G0846D-HYK0
Samsung Semiconductor
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Time-Max | 0.225 ns | |
| Clock Frequency-Max (fCLK) | 800 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B78 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR3L DRAM | |
| Memory Width | 8 | |
| Number of Terminals | 78 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.01 A | |
| Supply Current-Max | 0.125 mA | |
| Supply Voltage-Nom (Vsup) | 1.35 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4B2G0846D-HYK0
This table gives cross-reference parts and alternative options found for K4B2G0846D-HYK0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B2G0846D-HYK0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5TQ2G83FFR-G7J | DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, FBGA-78 | SK Hynix Inc | K4B2G0846D-HYK0 vs H5TQ2G83FFR-G7J |
| NT5CC256M8BN-AC | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | K4B2G0846D-HYK0 vs NT5CC256M8BN-AC |
| H5TQ2G83DFR-PBC | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | K4B2G0846D-HYK0 vs H5TQ2G83DFR-PBC |
| MT41K256M8HX-15E:D | DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B2G0846D-HYK0 vs MT41K256M8HX-15E:D |
| IS43TR82560A-15HBLI | DDR DRAM, 256MX8, 13.125ns, CMOS, PBGA78, 9 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78 | Integrated Silicon Solution Inc | K4B2G0846D-HYK0 vs IS43TR82560A-15HBLI |
| H5TQ2G83FFR-G7C | DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, FBGA-78 | SK Hynix Inc | K4B2G0846D-HYK0 vs H5TQ2G83FFR-G7C |
| MT41J256M8HX-125AIT:D | DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B2G0846D-HYK0 vs MT41J256M8HX-125AIT:D |
| H5TQ2G83EFR-RDC | DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | K4B2G0846D-HYK0 vs H5TQ2G83EFR-RDC |
| IS46TR82560A-187FBLA1 | DDR DRAM, 256MX8, 13.125ns, CMOS, PBGA78, 9 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78 | Integrated Silicon Solution Inc | K4B2G0846D-HYK0 vs IS46TR82560A-187FBLA1 |
| IS43TR82560A-125KBLI | DDR DRAM, 256MX8, 13.125ns, CMOS, PBGA78, 9 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78 | Integrated Silicon Solution Inc | K4B2G0846D-HYK0 vs IS43TR82560A-125KBLI |