There are no models available for this part yet.
Overview of K4H510438D-UCB3 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Computing and Data Storage
Price & Stock for K4H510438D-UCB3 by Samsung Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 9 |
|
RFQ | ||||
| Quest Components | IC,SDRAM,DDR,4X32MX4,CMOS,TSSOP,66PIN,PLASTIC | 80 |
|
$3.1200 / $7.2000 | Buy Now |
CAD Models for K4H510438D-UCB3 by Samsung Semiconductor
Part Data Attributes for K4H510438D-UCB3 by Samsung Semiconductor
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.28
|
|
Access Time-Max
|
0.75 ns
|
|
Clock Frequency-Max (fCLK)
|
133 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
2,4,8
|
|
JESD-30 Code
|
R-PDSO-G66
|
|
JESD-609 Code
|
e6
|
|
Memory Density
|
536870912 bit
|
|
Memory IC Type
|
DDR1 DRAM
|
|
Memory Width
|
4
|
|
Moisture Sensitivity Level
|
3
|
|
Number of Terminals
|
66
|
|
Number of Words
|
134217728 words
|
|
Number of Words Code
|
128000000
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
128MX4
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSSOP
|
|
Package Equivalence Code
|
TSSOP66,.46
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Sequential Burst Length
|
2,4,8
|
|
Standby Current-Max
|
0.005 A
|
|
Supply Current-Max
|
0.325 mA
|
|
Supply Voltage-Nom (Vsup)
|
2.5 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN BISMUTH
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.635 mm
|
|
Terminal Position
|
DUAL
|
Alternate Parts for K4H510438D-UCB3
This table gives cross-reference parts and alternative options found for K4H510438D-UCB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438D-UCB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V128M4P-75Z:F | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4P-75Z:F |
| K4H510438D-ULB0T | Cache DRAM Module, 128MX4, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510438D-UCB3 vs K4H510438D-ULB0T |
| MT46V128M4P-75EL:C | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4P-75EL:C |
| MT46V128M4P-75E | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4P-75E |
| MT46V128M4P-75:C | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4P-75:C |
| K4H510438B-UCB0 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510438D-UCB3 vs K4H510438B-UCB0 |
| K4H510438J-LLB00 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510438D-UCB3 vs K4H510438J-LLB00 |
| MT46V128M4TG-75 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4TG-75 |
| MT46V128M4TG-75E:C | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4TG-75E:C |
| MT46V128M4TG-75EL:F | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3 vs MT46V128M4TG-75EL:F |