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Transistors / Power Field-Effect Transistors / LP2305LT1G
Datasheets
LP2305LT1G by: LRC Leshan Radio Co Ltd

Power Field-Effect Transistor, 4.2A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN

Part Details for LP2305LT1G by LRC Leshan Radio Co Ltd

Results Overview of LP2305LT1G by LRC Leshan Radio Co Ltd

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LP2305LT1G Information

LP2305LT1G by LRC Leshan Radio Co Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for LP2305LT1G

Part # Distributor Description Stock Price Buy
DISTI # LP2305LT1G
Avnet Asia 3 PIN SURFACE MOOUN MOS FETS (Alt: LP2305LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days 150000
RFQ
CHIPMALL.COM LIMITED 30V 4.2A 130m@2.5V,1.0A 1.4W 700mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS 18319
  • 1 $0.0640
  • 100 $0.0485
  • 1,000 $0.0367
  • 1,500 $0.0301
  • 3,000 $0.0266
$0.0266 / $0.0640 Buy Now

Part Details for LP2305LT1G

LP2305LT1G CAD Models

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LP2305LT1G Part Data Attributes

Parametric Data
LP2305LT1G LRC Leshan Radio Co Ltd
Buy Now Datasheet
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LP2305LT1G LRC Leshan Radio Co Ltd Power Field-Effect Transistor, 4.2A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LRC
Additional Feature ULTRA-LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for LP2305LT1G

This table gives cross-reference parts and alternative options found for LP2305LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LP2305LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
DMP3098L-7 Diodes Incorporated $0.0980 Power Field-Effect Transistor, 3.8A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 LP2305LT1G vs DMP3098L-7
S-LP2305LT3G LRC Leshan Radio Co Ltd Check for Price Power Field-Effect Transistor, 4.2A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN LP2305LT1G vs S-LP2305LT3G
PJA3407_R2_00001 PanJit Semiconductor Check for Price Power Field-Effect Transistor, 3.8A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 LP2305LT1G vs PJA3407_R2_00001
PJS6405_S1_00001 PanJit Semiconductor Check for Price Power Field-Effect Transistor, 4.6A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 LP2305LT1G vs PJS6405_S1_00001
CPH3308 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 4A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CPH3, 3 PIN LP2305LT1G vs CPH3308

LP2305LT1G Related Parts

LP2305LT1G Frequently Asked Questions (FAQ)

  • The recommended PCB layout involves keeping the input and output traces separate, using a solid ground plane, and placing the device near a heat sink or thermal pad. A thermal management strategy should include a heat sink or thermal pad, and ensuring good airflow around the device.

  • Proper biasing involves setting the input voltage within the recommended range, ensuring the enable pin is properly driven, and configuring the output voltage divider correctly. Refer to the datasheet for specific biasing and configuration guidelines.

  • To minimize EMI and RFI, use a shielded enclosure, keep the device away from antennas and other RF sources, and ensure proper grounding and decoupling. Additionally, use a common-mode choke or ferrite bead on the input and output lines.

  • To troubleshoot, check the input voltage, output voltage divider, and enable pin configuration. Ensure the device is properly biased and configured. Use an oscilloscope to monitor the output voltage and identify any oscillations or instability. Consult the datasheet and application notes for guidance.

  • The LP2305LT1G is designed to meet industry-standard reliability and lifespan expectations. However, the actual lifespan depends on factors such as operating conditions, temperature, and usage. Refer to the datasheet for specific reliability and lifespan data.

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