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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH3104
|
Newark | Mosfet, N-Ch, 1.2Kv, 39A, 150Deg C, 179W Rohs Compliant: Yes |Littelfuse LSIC1MO120E0080 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$14.2700 / $21.5100 | Buy Now |
DISTI #
F10335-ND
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DigiKey | SICFET N-CH 1200V 39A TO247-3 Min Qty: 1 Lead time: 30 Weeks Container: Tube | Temporarily Out of Stock |
|
$13.9962 / $21.1000 | Buy Now |
|
Future Electronics | N-Channel 1200 V 80 mOhm Flange Mount Enhancement-mode SiC Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
|
$16.0900 / $16.8900 | Buy Now |
|
Future Electronics | N-Channel 1200 V 80 mOhm Flange Mount Enhancement-mode SiC Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
|
$16.0900 / $16.8900 | Buy Now |
DISTI #
LSIC1MO120E0080
|
TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 25A, Idm: 80A, 179W Min Qty: 1 | 0 |
|
$17.2500 / $22.5300 | RFQ |
|
Chip1Cloud | 500 |
|
RFQ | ||
DISTI #
3361191
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element14 Asia-Pacific | MOSFET, N-CH, 1.2KV, 39A, 150DEG C, 179W RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$15.6691 / $21.6105 | Buy Now |
DISTI #
3361191
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Farnell | MOSFET, N-CH, 1.2KV, 39A, 150DEG C, 179W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$14.6451 / $18.7991 | Buy Now |
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Ozdisan Elektronik | MOSFET SIL.CARB.DIS.39A 1200V N-CH TO247 | 0 |
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$30.7744 / $32.9286 | RFQ |
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LSIC1MO120E0080
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
LSIC1MO120E0080
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | TO-247, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 39 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 9 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |