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MCR08BT1,115 by:

MCR08BT1

Part Details for MCR08BT1,115 by NXP Semiconductors

Overview of MCR08BT1,115 by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for MCR08BT1,115

Part # Distributor Description Stock Price Buy
DISTI # 75R4734
Newark Thyristor, 800Ma, 200V, Sot-223, Peak Repetitive Off State Voltage:200V, Gate Trigger Current Max:200Μa, Average On State Current:500Ma, On State Rms Current:800Ma, Thyristor Case Style:Sot-223, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Nxp MCR08BT1,115 Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
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DISTI # 70R5728
Newark Thyristor, Peak Repetitive Off State Voltage:200V, Gate Trigger Current Max:200Μa, Average On State Current:500Ma, On State Rms Current:800Ma, Thyristor Case Style:Sot-223, No. Of Pins:3Pins, Peak Non Repetitive Surge Current:9A Rohs Compliant: Yes |Nxp MCR08BT1,115 Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 0
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Part Details for MCR08BT1,115

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MCR08BT1,115 Part Data Attributes

MCR08BT1,115 NXP Semiconductors
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MCR08BT1,115 NXP Semiconductors MCR08BT1
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-73
Package Description PLASTIC, SC-73, 4 PIN
Pin Count 4
Manufacturer Package Code SOT223
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.30.00.80
Additional Feature SENSITIVE GATE
Case Connection ANODE
Circuit Commutated Turn-off Time-Nom 100 µs
Configuration SINGLE
DC Gate Trigger Current-Max 0.2 mA
DC Gate Trigger Voltage-Max 0.8 V
Holding Current-Max 5 mA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-Repetitive Pk On-state Cur 9 A
Number of Elements 1
Number of Terminals 4
On-state Current-Max 500 A
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
RMS On-state Current-Max 0.8 A
Repetitive Peak Off-state Voltage 200 V
Repetitive Peak Reverse Voltage 200 V
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Trigger Device Type SCR

Alternate Parts for MCR08BT1,115

This table gives cross-reference parts and alternative options found for MCR08BT1,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MCR08BT1,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MCR08BT1 0.8A, 200V, SCR, CASE 318E, 4 PIN Motorola Mobility LLC MCR08BT1,115 vs MCR08BT1
MCR08BT1G Sensitive Gate Silicon Controlled Rectifier - SCR, SOT-223 (TO-261) 4 LEAD, 1000-REEL onsemi MCR08BT1,115 vs MCR08BT1G
934056931115 Silicon Controlled Rectifier, 0.8 A, 200 V, SCR, PLASTIC, SMD, 4 PIN NXP Semiconductors MCR08BT1,115 vs 934056931115
MCR08BT1 Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, PLASTIC, SC-73, 4 PIN WeEn Semiconductor Co Ltd MCR08BT1,115 vs MCR08BT1
MCR08BT1 0.8A, 200V, SCR, TO-261AA, CASE 318E-04, TO-261, 4 PIN onsemi MCR08BT1,115 vs MCR08BT1
Part Number Description Manufacturer Compare
EC103D Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-92, 3 PIN Teccor MCR08BT1,115 vs EC103D
C203C Silicon Controlled Rectifier, 0.8A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-92, NEC Electronics America Inc MCR08BT1,115 vs C203C
2N6565 Silicon Controlled Rectifier, 0.8A I(T)RMS, 255mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-92, 3 PIN Teccor MCR08BT1,115 vs 2N6565
EC103C1 Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 300V V(DRM), 1 Element, TO-92 Loras Industries Inc MCR08BT1,115 vs EC103C1
EC103B1AP Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92 Teccor MCR08BT1,115 vs EC103B1AP
2N888 Silicon Controlled Rectifier, 0.8A I(T)RMS, 350mA I(T), 150V V(DRM), 150V V(RRM), 1 Element, TO-18 Central Semiconductor Corp MCR08BT1,115 vs 2N888
EC103D2AP Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Littelfuse Inc MCR08BT1,115 vs EC103D2AP
C203Y Silicon Controlled Rectifier, 0.8A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-92, NEC Electronics America Inc MCR08BT1,115 vs C203Y
BT168G,112 Silicon Controlled Rectifier, 0.8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, PLASTIC, SC-43A, 3 PIN WeEn Semiconductor Co Ltd MCR08BT1,115 vs BT168G,112
T107A1 Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 100V V(DRM), 1 Element, TO-202AB Loras Industries Inc MCR08BT1,115 vs T107A1

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